Articles with public access mandates - tao xutang - Chinese Academy of SciencesLearn more
Not available based on mandate: 9
Double-Barrier β-Ga2O3 Schottky Barrier Diode With Low Turn-on Voltage and Leakage Current
W Xiong, X Zhou, G Xu, Q He, G Jian, C Chen, Y Yu, W Hao, X Xiang, ...
IEEE Electron Device Letters 42 (3), 430-433, 2021
High-Detectivity β-Ga₂O₃ Microflake Solar-Blind Phototransistor for Weak Light Detection
S Yu, X Zhao, M Ding, P Tan, X Hou, Z Zhang, W Mu, Z Jia, X Tao, G Xu, ...
IEEE Electron Device Letters 42 (3), 383-386, 2021
Balancing the Transmittance and Carrier‐Collection Ability of Ag Nanowire Networks for High‐Performance Self‐Powered Ga2O3 Schottky Photodiode
P Tan, X Zhao, X Hou, Y Yu, S Yu, X Ma, Z Zhang, M Ding, G Xu, Q Hu, ...
Advanced Optical Materials 9 (15), 2100173, 2021
High-Performance β-Ga2O3 Solar-Blind Photodetector With Extremely Low Working Voltage
C Chen, X Zhao, X Hou, S Yu, R Chen, X Zhou, P Tan, Q Liu, W Mu, Z Jia, ...
IEEE Electron Device Letters 42 (10), 1492-1495, 2021
Modified Bridgman growth and properties of mid-infrared LiInSe2 crystal
S Wang, X Zhang, X Zhang, C Li, Z Gao, Q Lu, X Tao
Journal of crystal growth 401, 150-155, 2014
Cracking mechanism and spectral properties of Er, Yb: CaGdAlO 4 crystals grown by the LHPG method
N Zhang, H Wang, Y Yin, T Wang, Z Jia, J Zhang, Q Hu, N Lin, X Fu, X Tao
CrystEngComm 22 (5), 955-960, 2020
Factors influencing optical uniformity of YAG single-crystal fiber grown by micro-pulling-down technology
B Wu, H Nie, A Wang, J Zhang, Z Jia, B Zhang, X Fu, Q Hu, J He, X Tao
CrystEngComm 21 (45), 6929-6934, 2019
Thermo-optic and spectroscopic properties of Yb: GAGG, Nd: GAGG and Nd: GGG laser materials at cryogenic temperature
Y Song, N Zong, Z Wang, D Cui, X Wang, Y Bo, Q Peng, Y Li, Z Jia, X Tao, ...
Journal of Luminescence 222, 117083, 2020
Dielectric, Piezoelectric, and Elastic Properties of a Polar Crystal Rb4Li2TiOGe4O12
Q Wu, C Tang, F Liu, Z Gao, M Xia, X Tao, R Li
Crystal Growth & Design 22 (3), 1738-1742, 2022
Available based on mandate: 6
Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics
Q He, W Mu, H Dong, S Long, Z Jia, H Lv, Q Liu, M Tang, X Tao, M Liu
Applied Physics Letters 110 (9), 2017
Toward emerging gallium oxide semiconductors: A roadmap
Y Yuan, W Hao, W Mu, Z Wang, X Chen, Q Liu, G Xu, C Wang, H Zhou, ...
Fundamental Research 1 (6), 697-716, 2021
Schottky Barrier Rectifier Based on (100)-Ga2O3and its DC and AC Characteristics
Q He, W Mu, B Fu, Z Jia, S Long, Z Yu, Z Yao, W Wang, H Dong, Y Qin, ...
IEEE Electron Device Letters 39 (4), 556-559, 2018
Characterization of the inhomogeneous barrier distribution in a Pt/(100) β-Ga2O3 Schottky diode via its temperature-dependent electrical properties
G Jian, Q He, W Mu, B Fu, H Dong, Y Qin, Y Zhang, H Xue, S Long, Z Jia, ...
AIP Advances 8 (1), 2018
CV and JV investigation of HfO2/Al2O3 bilayer dielectrics MOSCAPs on (100) β-Ga2O3
H Dong, W Mu, Y Hu, Q He, B Fu, H Xue, Y Qin, G Jian, Y Zhang, S Long, ...
AIP Advances 8 (6), 2018
Benchmarking β‐Ga2O3 Schottky Diodes by Nanoscale Ballistic Electron Emission Microscopy
R Buzio, A Gerbi, Q He, Y Qin, W Mu, Z Jia, X Tao, G Xu, S Long
Advanced Electronic Materials 6 (3), 1901151, 2020
Publication and funding information is determined automatically by a computer program