Articles with public access mandates - Jianguo Wen (J.G. Wen) - Swedish Research CouncilLearn more
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Real-time control of AlN incorporation in epitaxial Hf1− xAlxN using high-flux, low-energy (10–40 eV) ion bombardment during reactive magnetron sputter deposition from a Hf0 …
BM Howe, E Sammann, JG Wen, T Spila, JE Greene, L Hultman, I Petrov
Acta materialia 59 (2), 421-428, 2011
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