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We present structural and electrical characterization of SrZrO 3 that has been epitaxially grown on Ge (001) by oxide molecular beam epitaxy. Single crystalline SrZrO 3 can be nucleated on Ge via deposition at low temperatures followed by annealing at 550 C in ultra-high vacuum. Photoemission spectroscopy measurements reveal that SrZrO 3 exhibits a type-I band arrangement with respect to Ge, with conduction and valence band offsets of 1.4 eV and 3.66 eV, respectively. Capacitance-voltage and current-voltage measurements on 4 nm thick films reveal low leakage current densities and an unpinned Fermi level at the interface that allows modulation of the surface potential of Ge. Ultra-thin films of epitaxial SrZrO 3 can thus be explored as a potential gate dielectric for Ge.