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Targeting on gate ringing suppression in gallium nitride (GaN) dc-dc converter. This paper presents a 10MHz switching frequency gate driver for GaN-based buck converter which including a fixed dead time modulator to prevent high side and low side shoot-through issue, active bootstrap control is necessary for GaN application because of the leakage of body diode to control bootstrap circuit voltage under 5V, gate ringing suppression gate driver is used to provide multi-slew rate driving current furthermore reducing voltage spike appears at power devise and a high voltage level shifter. This work fabricated in a 0.25-μm Bipolar-CMOS-DMOS process.