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Magnetic materials enjoy an envious position in the area of data storage, electronics, and even in biomedical field. This review provides an overview of low-dimensional magnetism in graphene, h-BN, and carbon nitrides, which originates from defects like vacancy, adatom, doping, and dangling bonds. In transition metal dichalcogenides, a tunable magnetism comes from doping, strain, and vacancy/defects, and these materials offer spintronics, as well as photoelectronic potentials, since they have an additional degree of freedom called valley state (e.g. MoS₂). Strain- and layer-dependent magnetic ordering has been observed in layered compounds like CrXTe₃, CrI₃, and trisulfides. The magnetism in 2D oxides like MoO₃, Ni(OH)₂, and perovskites are also interesting as they are potential candidates for next-generation devices having faster processing and large data storage capacity. Quasi 2D magnetism in …