Authors
Xiao Huo, Min Zhang, Philip CH Chan, Qi Liang, ZK Tang
Publication date
2004/12/13
Conference
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.
Pages
691-694
Publisher
IEEE
Description
High frequency S parameters characterization up to 10 GHz for back-gate carbon nanotube field-effect transistors (CNFETs) was carried for the first time. The high frequency transmission properties of back-gate CNFETs were compared and analyzed at different gate bias voltages using a lumped element model.
Total citations
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Scholar articles
X Huo, M Zhang, PCH Chan, Q Liang, ZK Tang - IEDM Technical Digest. IEEE International Electron …, 2004