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A fast and flexible fabrication method that allows the creation of silicon structures of various geometries is presented. It is based on the combination of focused ion beam local gallium implantation, selective silicon etching, and diffusive boron doping. The structures obtained by this resistless method are electrically conductive. Freely suspended mechanical resonators of different dimensions and geometries have been fabricated and measured. The resulting devices present a good electrical conductivity which allows the characterization of their high-frequency mechanical response by electrical read-out.