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Copper-rich interfacial-layer (Cu-rich IL) is formed during sputter deposition of cupric oxide (CuO) layer on silicon (Si). It has significant impact on the performance of p-CuO/n-Si heterojunction solar cells. In this report, CuO films deposited on Si at different RF-power levels using single and two-step RF-sputtering techniques and p-CuO/n-Si heterojunction solar cells have been investigated. Systematic characterization using XPS, AFM, XRD, Raman, and HR-TEM reveal that two-step RF-sputtering technique offers better crystal quality CuO film with thinner Cu-rich IL layer. Photovoltaic (PV) properties with an open-circuit voltage (V oc) of 421 mV, short circuit current (J sc) of 4.5 mA/cm 2, and a photocurrent of 8.3 mA/cm 2 have been achieved for the cells prepared using two-step sputtering method, which are significantly higher than that for the solar cells fabricated using a single-step sputtering. The PV properties …