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High-performance vertical GaN-based p-n junction diodes fabricated using bandgap selective photoelectrochemical etching-based epitaxial liftoff (ELO) from bulk GaN substrates are demonstrated. The epitaxial GaN layers and pseudomorphic InGaN release layer were grown by MOCVD on bulk GaN substrates. A comparison study was performed between devices after liftoff processing (after transfer to a Cu substrate) and nominally identical control devices on GaN substrates without the buried release layer or ELO-related processing. ELO and bonded devices exhibit nearly identical electrical performance and improved thermal performance, compared with the control devices on full-thickness GaN substrates. The breakdown voltage, ideality factor, and forward turn-ON performance were found to be nearly identical, indicating that the transfer process does not degrade the quality of the p-n junctions. The devices …