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This article discusses metal-organic vapor phase epitaxy growth of all-phosphide (AlInP-InGaP) distributed Bragg reflectors (DBRs) and their applications for thin flexible multijunction solar cell devices. DBRs with a peak reflectance of 884 nm-close to the GaAs bandgap energy-were grown. This all-phosphide DBR was monolithically integrated with a dual-junction (DJ) InGaP/GaAs solar cell. The DJ cell with a DBR exhibited a 3% increase in short-circuit current density (Jsc), in comparison with the DJ without a DBR. Both open-circuit voltage (Voc) and fill factor (FF) values of the solar cell did not change with the DBR integration.