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(21) Appl. No.: 11/051,396 transistor (BJT). The BJT includes a collector, a base, and an 1-1. emitter. In one embodiment the BJT is formed inherently (22) Filed: Feb. 4, 2005 within a field effect transistor (FET), including a first doped (51) Int. Cl region, a second doped region, a gate, and a body region. iotL 2 9/00 2006. O1 The collector of the BJT is realized by the first doped region (. 01) of the FET, the emitter of the BJT is realized by the second (52) US Cl.......... r irrir. 257/529; 257/565 doped region of the FET, and the base of the BJT is realized (58) Field of Classification Search................ 257/. 530, by the body region. A high resistance path exists between the 257/529,565; 438/131, 467, 600 collector and the base. A first input Voltage is connected to See application file for complete search history. the collector and a second input voltage is connected to the (56) Ref Cited base. A switch connects the emitter to a fixed …