Authors
A Wei, SL Kosier, RD Schrimpf, WE Combs, M DeLaus
Publication date
1995/5
Journal
IEEE transactions on electron devices
Volume
42
Issue
5
Pages
923-927
Publisher
IEEE
Description
Excess collector current in irradiated NPN BJT's is linked to an oxide-trapped-charge-induced inversion layer acting as an additional emitter. Excess collector current is modeled by interpreting the inversion layer as an extension of the emitter.< >
Total citations
Scholar articles
A Wei, SL Kosier, RD Schrimpf, WE Combs, M DeLaus - IEEE transactions on electron devices, 1995