Authors
Sandhya Gupta, JC Beckman, SL Kosier
Publication date
2001/12
Journal
IEEE Electron Device Letters
Volume
22
Issue
12
Pages
600-602
Publisher
IEEE
Description
The performance of the unbiased guard ring structure is measured and the effects of high current, emitter area, and layout of unbiased guard rings are reported and explained. Measurements show a reduction in parasitic gain by up to six orders of magnitude, while also avoiding the cross talk and power consumption of biased rings. A comparative analysis of unbiased guard ring with biased guard ring shows up to 100 times better performance at low current levels. A modification to the unbiased guard ring is also implemented and successfully tested which shows an increase in the current handling capability of the structure by an order of magnitude.
Total citations
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