Authors
Koiser, Schrimpf, Wei, DeLaus, Fleetwood, Combs
Publication date
1993/10/4
Journal
1993 Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Pages
211-214
Publisher
IEEE
Description
The role of net positive oxide trapped charge and surface recombination velocity on excess base current in bipolar junction transistors (BJTs) is identified. The effects of the two types of damage can be detected by plotting the excess base current versus base-emitter voltage. Differences and similarities between ionizing-radiation-induced and hot electron-induced degradation are discussed.
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Koiser, Schrimpf, Wei, DeLaus, Fleetwood, Combs - 1993 Proceedings of IEEE Bipolar/BiCMOS Circuits …, 1993