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In one aspect, a vertical Hall effect sensor includes a semi conductor wafer having a first conductivity type and a plural ity of semiconductive electrodes disposed on the semicon ductor wafer. The plurality of semiconductive electrodes have the first conductivity type and include a source electrode, a first sensing electrode and a second sensing electrode, arranged such that the source electrode is between the first sensing electrode and the sensing electrode and a first drain electrode and a second drain electrode, arranged such that the first sensing electrode, second sensing electrode, and source electrode are between the first drain electrode and the second drain electrode. The vertical Hall effect sensor also includes a plurality of semiconductor fingers disposed on the semicon ductor wafer and interdigitated with the plurality of semicon ductive electrodes, the semiconductor fingers having a sec ond conductivity type.