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The dependence of the residual polarization of negative muons in n‐type Si with impurity concentration (1.6\pm 0.2)\times 10¹³\ cm^-3 on temperature in the 10–300 K range has been investigated. Measurements were carried out in external magnetic field of 0.08 T transverse to the muon spin. Muon spin relaxation and frequency shift were observed at temperatures below 30 K. The relaxation rate at 30 K is equal to 0.25\pm 0.08\,μ s^-1. The frequency shift at 20 K is equal to 7\times 10^-3. Both the relaxation rate and the frequency shift grow with decrease of temperature. Below 30 K the relaxation rate is well described by the dependence \varLambda=bT^-q, where q=2.8.

An analysis of present and earlier published data on behavior of negative muon polarization in silicon is given. A possible mechanism of relaxation and frequency shift of muon spin precession in silicon is considered.