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Recent advances in the fabrication of semiconductor quantum dots have generated huge quantities of experimental and theoretical data. 1, 2 The three-dimensional confinement of charge carriers in various structures provides fascinating optical and magnetic characteristics for many important device applications. The intensive investigation, to a large part, is driven by the prospect of fabricating a new generation of electronic and photonic devices quantum dot lasers for instance. 2

The spectral broadening in semiconductor quantum dots caused by the nonuniformity in their size and shape is of primary concern for practical laser applications. 2–5 Many studies were carried out for fabrication of quantum dots with a small size variation. 6–11 The best result so far is achieved in the so-called self-assembled InAs quantum dots grown on GaAs substrate by the Stranski–Krastanow mode. It has been shown experimentally …