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Rare-earth element erbium implanted into silicon was studied by photoluminescence and Rutherford backscattering analysis. Two sets of luminescent bands related to the weakly crystal field split spin-orbit levels 411}/2-> 4 [t5/2 of Er J+(4f It) at different lattice sites having different symmetries were observed.

Recently more and more optical studies on rare-earth element doping of III-V compounds and silicon have been reported l-5 due to their potential device applications. Sharply structured photoluminescence bands resulting from internal intra-4f transitions of the rare-earth ions were observed. The emission of Er3-t is centered at about 1.54 f1m in III-V compounds as wen as silicon. Ennen and co-workers 1--3 have shown that this transition comes from the weakly crystal field split spin-orbit levels 4 [13/2-4> 4115/2 ofErH(4/ll). In this letter we report the characteristic properties of 166Er implanted in silicon studied by …