Authors
Jeffrey D Black, Andrew L Sternberg, Michael L Alles, Arthur F Witulski, Bharat L Bhuva, Lloyd W Massengill, Joseph M Benedetto, Mark P Baze, Jerry L Wert, Matthew G Hubert
Publication date
2005/12
Journal
IEEE transactions on nuclear science
Volume
52
Issue
6
Pages
2536-2541
Publisher
IEEE
Description
A three-dimensional (3D) technology computer-aided design (TCAD) model was used to simulate charge collection at multiple nodes. Guard contacts are shown to mitigate the charge collection and to more quickly restore the well potential, especially in PMOS devices. Mitigation of the shared charge collection in NMOS devices is accomplished through isolation of the P-wells using a triple-well option. These techniques have been partially validated through heavy-ion testing of three versions of flip-flop shift register chains.
Total citations
Scholar articles
JD Black, AL Sternberg, ML Alles, AF Witulski… - IEEE transactions on nuclear science, 2005