Authors
Oluwole A Amusan, Lloyd W Massengill, Bharat L Bhuva, Sandeepan DasGupta, Arthur F Witulski, Jonathan R Ahlbin
Publication date
2007/12/12
Journal
IEEE Transactions on Nuclear Science
Volume
54
Issue
6
Pages
2060-2064
Publisher
IEEE
Description
Analysis of 90 nm CMOS SET response quantifies the interaction between charge collection and charge redistribution in a matched-current-drive inverter chain. It is shown that the SET pulse width difference between an n-hit and p-hit is due to parasitic bipolar amplification on the PMOS device. This difference is exploited to optimize transistor sizing and n-well contact layout for SET RHBD in combinational logic.
Total citations
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Scholar articles
OA Amusan, LW Massengill, BL Bhuva, S DasGupta… - IEEE Transactions on Nuclear Science, 2007