Authors
S DasGupta, AF Witulski, BL Bhuva, ML Alles, RA Reed, OA Amusan, JR Ahlbin, RD Schrimpf, LW Massengill
Publication date
2007/12/12
Journal
IEEE Transactions on Nuclear Science
Volume
54
Issue
6
Pages
2407-2412
Publisher
IEEE
Description
Simulations are used to characterize the single event transient current and voltage waveforms in deep submicron CMOS integrated circuits. Results indicate that the mechanism controlling the height and duration of the observed current plateau is the redistribution of the electrostatic potential in the substrate following a particle strike. Quantitative circuit and technology factors influencing the mechanism include restoring current, device sizing, and well and substrate doping.
Total citations
Scholar articles
Effect of well and substrate potential modulation on single event pulse shape in deep submicron CMOS
S DasGupta, AF Witulski, BL Bhuva, ML Alles, RA Reed… - IEEE Transactions on Nuclear Science, 2007