View article

Analysis of parasitic PNP bipolar transistor mitigation using well contacts in 130 nm and 90 nm CMOS technology

Authors

Brian D Olson, Oluwole A Amusan, Sandeepan Dasgupta, Lloyd W Massengill, Arthur F Witulski, Bharat L Bhuva, Michael L Alles, Kevin M Warren, Dennis R Ball

Publication date

2007/8/20

Journal

IEEE Transactions on Nuclear Science

Volume

Issue

Pages

894-897

Publisher

IEEE

Description

Three-dimensional TCAD models are used in mixed- mode simulations to analyze the effectiveness of well contacts at mitigating parasitic PNP bipolar conduction due to a direct hit ion strike. 130 nm and 90 nm technology are simulated. Results show careful well contact design can improve mitigation. However, well contact effectiveness is seen to decrease from the 130 nm to the 90 nm simulations.

Total citations

Cited by 121

2007200820092010201120122013201420152016201720182019202020212022202320242 7 14 13 13 12 12 9 7 5 5 6 3 1 3 2 6 1

Scholar articles

Analysis of parasitic PNP bipolar transistor mitigation using well contacts in 130 nm and 90 nm CMOS technology

BD Olson, OA Amusan, S Dasgupta, LW Massengill… - IEEE Transactions on Nuclear Science, 2007