Authors
Davide Rossi, Francesco Conti, Andrea Marongiu, Antonio Pullini, Igor Loi, Michael Gautschi, Giuseppe Tagliavini, Alessandro Capotondi, Philippe Flatresse, Luca Benini
Publication date
2015/8/1
Conference
2015 IEEE Hot Chips 27 Symposium (HCS)
Pages
1-39
Publisher
IEEE Computer Society
Description
State retentive (no state retentive registers and memories) Ultra-fast transitions (tens of ns depending on n-well area to bias) Low area overhead for isolation (3µm spacing for deep n-well isolation) Thin grids for voltage distribution (small transient current for wells polarization) Simple circuits for on-chip VBB generation (eg charge pump)
Scholar articles
D Rossi, F Conti, A Marongiu, A Pullini, I Loi… - 2015 IEEE Hot Chips 27 Symposium (HCS), 2015