View article

Lower threshold voltages in deep submicron technologies cause more leakage current, increasing static power dissipation. This trend, combined with the trend of larger/more cache memories dominating die area, has prompted circuit designers to develop SRAM cells with low-leakage operating modes (e.g., sleep mode). Sleep mode reduces static power dissipation, but data stored in a sleeping cell is unreliable or lost. So, at the architecture level, there is interest in exploiting sleep mode to reduce static power dissipation while maintaining high performance.Current approaches dynamically control the operating mode of large groups of cache lines or even individual cache lines. However, the performance monitoring mechanism that controls the percentage of sleep-mode lines, and identifies particular lines for sleep mode, is somewhat arbitrary. There is no way to know what the performance could be with all cache …