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Rapid thermal processing (RTP) using radiative heat transfer has advanced after the early studies1, 2 and is currently a very popular technology. It is widely used for many applications in semiconductor manufacturing processes including chemical vapor deposition (CVD) on silicon substrates. Although a new modification of RTP has been developed3 and RTP has been extended for various materials including gallium arsenide, 4 major problems in the current RTP system or process still exist, such as thermal budget, 5 temperature reproducibility and uniformity6 which lead to nonuniform film thickness, slip lines, and warpage of the silicon substrate. 7-10 The reproducibility and the uniformity of the substrate temperature are affected by parameters6 such as (i) sensing and control of substrate temperature,(ii) process chamber (substrate properties, film properties, dimensions, shape, wall material properties, gas flow …