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A method is described and used to evaluate the transient stresses in a sintering compact of ZnO containing a hard, dense dispersion of SiC. A hard second phase can severely limit densification rates by generating a mean hydrostatic stress, σ h, which opposes the compressive sintering stress of the matrix. σ h rapidly increases with increasing volume fraction, ƒ, of the second phase. The interface stress, σ i., at the ZnO SiC boundary increases with decreasing ƒ, σ i can attain large values, especially in the intermediate stage of sintering. The effect of these stresses on microstructural development is considered.