Inventors
Wayne A Anderson, Lin Huang Chang
Publication date
2002/1/22
Patent office
US
Patent number
6340621
Application number
09387019
Description
Appl. No.: 09/387,019 1-1. Ferroelectric Pbzr. TO (PZT) thin films are deposited on (22) Filed: Aug. 31, 1999 Pt coated Si Substrates by using RF magnetron Sputtering. A
Total citations
Scholar articles
WA Anderson, LH Chang - US Patent 6,340,621, 2002