Inventors
Wayne A Anderson, Lin Huang Chang
Publication date
1999/11/2
Patent office
US
Patent number
5978207
Application number
08961439
Description
Ferroelectric Pbzr. TO (PZT) thin films are deposited on Pt coated Si Substrates by using RF magnetron Sputtering. A method for obtaining desirable stoichiometric PZT, the desired ferroelectric perovskite phase, and better dielectric properties using a PZT target with Pb/(Zr+ TI) ratio of 1.2 and depositing at 350 C., followed by thermal treatment at
Total citations
Scholar articles
WA Anderson, LH Chang - US Patent 5,978,207, 1999