Inventors
Wayne A Anderson, Quanxi Jia, Junsin Yi, Lin-Huang Chang
Publication date
1996/12/24
Patent office
US
Patent number
5587870
Application number
08263521
Description
The invention relates to a method for forming a high capacitance thin film capacitor comprising forming layers of dielectric material in amorphous, nanocrystalline and polycrystalline configuration and arranging the resulting layers between upper and lower electrodes. The invention further comprises dielectric articles such as capacitors formed in accordance with the method of the invention and includes their use in an electronic circuit.
Total citations
Scholar articles
WA Anderson, Q Jia, J Yi, LH Chang - US Patent 5,587,870, 1996