Authors
Ka Nang Leung, Philip KT Mok, Chi Yat Leung
Publication date
2003/3/10
Journal
IEEE Journal of Solid-State Circuits
Volume
38
Issue
3
Pages
561-564
Publisher
IEEE
Description
A high-order curvature-compensated CMOS bandgap reference, which utilizes a temperature-dependent resistor ratio generated by a high-resistive poly resistor and a diffusion resistor, is presented in this paper. Implemented in a standard 0.6-μm CMOS technology with V/sub thn//spl ap/|V/sub thp/|/spl ap/0.9 V at 0°C, the proposed voltage reference can operate down to a 2-V supply and consumes a maximum supply current of 23 μA. A temperature coefficient of 5.3 ppm/°C at a 2-V supply and a line regulation of ±1.43 mV/V at 27°C are achieved. Experimental results show that the temperature drift is reduced by approximately five times when compared with a conventional bandgap reference in the same technology.
Total citations
Scholar articles
KN Leung, PKT Mok, CY Leung - IEEE Journal of Solid-State Circuits, 2003