Authors
Eeuwe S Zijlstra, Alan Kalitsov, Tobias Zier, Martin E Garcia
Publication date
2013/8/7
Journal
Advanced Materials (Deerfield Beach, Fla.)
Volume
25
Issue
39
Pages
5605-5608
Description
Microscopic processes leading to ultrafast laser-induced melting of silicon are investigated by large-scale ab initio molecular dynamics simulations. Before becoming a liquid, the atoms are shown to be fractionally diffusive, which is a property that has so far been observed in crowded fluids consisting of large molecules. Here, it is found to occur in an elemental semiconductor.
Total citations
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Scholar articles
ES Zijlstra, A Kalitsov, T Zier, ME Garcia - Advanced Materials (Deerfield Beach, Fla.), 2013