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The present invention provides a method of patterning a Self-assembled monolayer (SAM) on a Substrate comprising employing low electron-beam lithography to Selectively deactivate functional groups at the Surface of Said SAM in a preselected area of Said Surface, wherein Said functional groupS bind to a target Substance but Said deactivated functional groups do not, So that the Surface of Said SAM can be contacted with Said target Substance So that the target Substance binds to Said functional groups but does not bind to Said deactivated groups in Said preselected area, to yield a pattern of Said target Substance on Said Surface.