Authors
Jennifer A Dionne, Kenneth Diest, Luke A Sweatlock, Harry A Atwater
Publication date
2009/2/11
Journal
Nano letters
Volume
9
Issue
2
Pages
897-902
Publisher
American Chemical Society
Description
Realization of chip-based all-optical and optoelectronic computational networks will require ultracompact Si-compatible modulators, ideally comprising dimensions, materials, and functionality similar to electronic complementary metal−oxide−semiconductor (CMOS) components. Here we demonstrate such a modulator, based on field-effect modulation of plasmon waveguide modes in a MOS geometry. Near-infrared transmission between an optical source and drain is controlled by a gate voltage that drives the MOS into accumulation. Using the gate oxide as an optical channel, electro-optic modulation is achieved in device volumes of half of a cubic wavelength with femtojoule switching energies and the potential for gigahertz modulation frequencies.
Total citations
Scholar articles
JA Dionne, K Diest, LA Sweatlock, HA Atwater - Nano letters, 2009