Authors
Abu Riduan Md Foisal, Toan Dinh, Viet Thanh Nguyen, Philip Tanner, Hoang-Phuong Phan, Tuan-Khoa Nguyen, Ben Haylock, Erik W Streed, Mirko Lobino, Dzung Viet Dao
Publication date
2019/2/27
Journal
IEEE Transactions on Electron Devices
Volume
66
Issue
4
Pages
1804-1809
Publisher
IEEE
Description
Self-powered photodetectors (PDs) are highly desirable for many applications, ranging from smart cities to optical communications. Herein, we report on a selfpowered broadband [UV to near-infrared (NIR)] PD based on a single-crystalline SiC (100)/Si (100) heterojunction. In self-powered photovoltaic detection mode, the detector exhibits a high responsivity (2500 V/W at 8.0 x 10 -6 W/cm 2 , 521 nm) and specific detectivity (~1013 Jones at 8.0 x 10 -6 W/cm 2 , 521 nm) under UV, visible, and NIR spectral illuminations thanks to the superior rectification property of the heterojunction which results in significantly reducing the dark current. The device also shows high illumination ON/OFF switching ratios, as high as 2.2x10 7 , with an excellent stability and repeatability. A detailed insight about electron- hole pairs generation, separation, and Fermi-energy level shifting at different illumination conditions has been …
Total citations
202020212022202320247129128
Scholar articles
ARM Foisal, T Dinh, VT Nguyen, P Tanner, HP Phan… - IEEE Transactions on Electron Devices, 2019