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Antiphase-domain (APD) free GaP films were grown on Si (100) substrates prepared by annealing under dilute AsH 3 in situ in an MOCVD reactor. LEED and AES surface analysis of Si (100) surfaces prepared by this treatment show that AsH 3 etching quickly removes O and C contaminants at a relatively low temperature (690–740 C), and creates a single-domain “A-type” As/Si surface reconstruction. The resulting GaP epilayers grown at the same temperature are APD-free, and could thereby serve as templates for direct growth of III-V semiconductors on Si. This single chamber process has a low thermal budget, and can enable heteroepitaxial integration of III-Vs and Si at an industrial scale.

The heteroepitaxial growth of III-V semiconductors on Si substrates is an enabling technology for lowering the cost of high-efficiency multijunction photovoltaics and optoelectronic devices. 1 The nucleation and growth of GaP …