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The principles of scanning tunnelling microscopy (STM) are extended to the study of field electron emission from metal, semiconducting and semi-insulating materials. A specially designed, high-vacuum STM device called a scanning tunnelling field emission microscope (STFEM) is constructed, and new measuring procedures are developed to examine complex physical properties of emission centres. Providing high bias voltages and fast mapping of large squares, the STFEM allows one to obtain reliable statistical data on surface properties, namely topography, emission intensity, surface potential distribution and local electroconductivity. Results from a study of low-field electron emission from CVD diamond films are described to illustrate the functional capabilities of the new STM device. It was found that the diamond films studied are composed of nanograined phases distinguished by their physical properties. It …