Authors
Haixiao Cao, Xu Yang, Chenkang Xue, Lenian He, Zhichao Tan, Menglian Zhao, Yong Ding, Wuhua Li, Wanyuan Qu
Publication date
2021/8/24
Journal
IEEE Journal of Solid-State Circuits
Volume
56
Issue
12
Pages
3628-3638
Publisher
IEEE
Description
This work presents a 48-1V dc–dc converter with an on-chip switch and gallium nitride (GaN) hybrid power conversion. By series connecting a 12-level Dickson switched-capacitor with a two-phase switched-inductor circuit, the capacitors take over most of the 48-V voltage stresses. The circuit, thus, reduces to an equivalent 4-1V converter, making the on-chip 5-V transistor applicable for a 48-V high-voltage design. Due to the easy integration of on-chip switches and superior switch figures of merit over other 48-1V counterparts, this proposed design is able to achieve the highest switching frequency, the lowest external switch count, and the improved power density compared with other prior-state-of-the-arts. The prototype was fabricated using a 0.18- BCD process with an evaluation board volume of 17 mm 15 mm 2.6 mm. The converter achieves a maximum 8-A loading capacity with the input range from …
Total citations
2021202220232024112245
Scholar articles
H Cao, X Yang, C Xue, L He, Z Tan, M Zhao, Y Ding… - IEEE Journal of Solid-State Circuits, 2021