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We performed density functional theory study on the electronic and magnetic properties of armchair MoS 2 nanoribbons (AMoS 2 NR) with different edge hydrogenation. Although bare and fully passivated AMoS 2 NRs are nonmagnetic semiconductors, it was found that hydrogenation in certain patterns can induce localized ferromagnetic edge state in AMoS 2 NRs and make AMoS 2 NRs become antiferromagnetic semiconductors or ferromagnetic semiconductors. Electric field effects on the bandgap and magnetic moment of AMoS 2 NRs were investigated. Partial edge hydrogenation can change a small-sized AMoS 2 NR from semiconductor to metal or semimetal under a moderate transverse electric field. Since the rate of edge hydrogenation can be controlled experimentally via the temperature, pressure and concentration of H 2, our results suggest edge hydrogenation is a useful method to engineer the band …