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We study the carrier distribution in multi quantum well (multi-QW) InGaN light-emitting diodes. Conventional wisdom would assume that a large number of QWs lead to a smaller carrier density per QW, enabling efficient carrier recombination at high currents. We use angle-resolved far-field measurements to determine the location of spontaneous emission in a series of multi-QW samples. They reveal that, no matter how many QWs are grown, only the QW nearest the p layer emits light under electrical pumping, which can limit the performances of high-power devices.