Authors
B Daudin, F Widmann, G Feuillet, Y Samson, M Arlery, JL Rouvière
Publication date
1997/9/15
Journal
Physical Review B
Volume
56
Issue
12
Pages
R7069
Publisher
American Physical Society
Description
It is demonstrated by in situ reflection-high-energy-electron-diffraction studies that the growth of hexagonal GaN on AlN occurs either purely in a layer-by-layer mode or in a Stranski-Krastanov mode, depending on the substrate temperature. Nanometric GaN islands embedded in AlN were fabricated by controlling the growth mode. Electron microscopy and atomic-force microscopy revealed that the dimensions of GaN dots could be varied down to values where zero-dimensional quantum effects are expected: the smallest dots were typically 10 nm wide and 2 nm high. These results open the way to the fabrication of quantum dots in materials with optical properties in the uv wavelength range.
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B Daudin, F Widmann, G Feuillet, Y Samson, M Arlery… - Physical Review B, 1997