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We report for the first time a novel structure of tunneling field-effect transistors (TFETs) with ferroelectric and nanowire concepts. The device is modeled carefully to utilize the benefits of ferroelectrics through metal-ferroelectric by enhancing the internal voltage across the ferroelectric region. The physical behavior of proposed design is analyzed for the improvement of device performance in comparison to the nominal ferroelectric-insulator TFET structure. The proposed design is capable in delivering impressive figures in Ion as 212 μA/μm. reasonable Ioff together with steep subthreshold swing of 33.3 mV/dec.