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This paper discusses the design and optimization of Multi-fin TFETs using TCAD simulations. In this work, we have studied the effect of multi fins on the DC parameters, drive current, threshold voltage, subthreshold swing, and transconductance for various values of inter fin spacing. The drive current extracted is linearly depending on the number of fins. A lower subthreshold swing of~ 41mV/dec is obtained which gives good sound to use this design for digital applications. All the DC parameters extracted in this paper are based on 50 nm technology parameter space with silicon as the base material.