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We for the first time report ferroelectric based nanosheet line-tunneling field effect transistors (FeNLTFETs) by scaled n-epitaxial layer with Si _1-x Ge _x as the source. The major engineering findings are shown by analyzing with physical governed factors to estimate the performance of FeNLTFETs. The line-tunneling mechanism with ferroelectric material (HZO) is properly tuned to improve the performance of ferroelectric line- TFETs. The suggested and simulated design is capable to deliver with the magnitude of Ion as 36.12 J.lA/J.lm, the impressive I _Off of 94.31 aA/μm, and minimum and maximum subthreshold swings are of 3.75 mV/dec and 42.69 mV/dec, respectively. Notably, the estimated I _on /I _off is in the orders of 10 ¹¹ on the scaled epitaxial ferroelectric nanosheet line-TFET (SEFeNLTFET) structure by using Sio.6Geo.4 as source.