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one of the futuristic devices in replacing the conventional MOS device structure is TFET. In the proposed work, a 3D-fin-TFET geometrical structure with various lower-band gap materials has been investigated and achieved the sophisticated results. The higher drive current (I _DS ) achievement with the use of InAs based source junction has been reported. In addition to this various DC and RF metrics have been investigated and shown with better results. These characteristics have been extracted by considering the source material variations with that of Si/Sio _0.6 Geo _0.4 /InAs and the rcst is of Si. Thc clectrical analysis is cxtracted by using HfO ₂ as the dielectric, hence the maximum drive current (I _D ) of 7.1 mA is reported with InAs as the source. A least subthreshold swing of 11.90mV/decade is reported. For an InAs as source improved characteristics have been observed in the various DC characteristics are of …