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TFETs are the competitive structures in replacement of MOSFET. Our designed structure is based on material variation with the use of SiGe compound for 3D fin-TFET construction by varying the fin-height. In this work, DC and RF characterization of the device is also reported. The characteristics have been analysed with the variation in fin-height and material variation at different regions of the structure. The drive current (I _D ) of ~4×10 ^-6 A with low leakage current of 0.1×10 ^-15 A and least subthreshold swing of 18.23mV/decade have reported. Other DC characteristics such as transconductance, output impedance and RF metrics such as unity gain cutoff frequency, maximum oscillation frequencies have been reported with maximum f _t of 65 GHz and f _max of 200 GHz. An optimized gate height of H = 10nm (AR = 1) is finalized for observing better performance metrics for the proposed device structure.