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Bottom-gate, top-contact (inverted staggered) organic thin-film transistors with a channel length of 1μm have been fabricated on flexible plastic substrates using the vacuum-deposited small-molecule semiconductor 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (C₁₀-DNTT). The transistors have an effective field-effect mobility of 1.2cm²/Vs, an on/off ratio of 10⁷, a width-normalized transconductance of 1.2S/m (with a standard deviation of 6%), and a signal propagation delay (measured in 11-stage ring oscillators) of 420ns per stage at a supply voltage of 3V. To our knowledge, this is the first time that megahertz operation has been achieved in flexible organic transistors at supply voltages of less than 10V.