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DOI: 10.1002/adma. 201403481 in a unipolar design based entirely on p-channel TFTs.[9, 16, 17] However, in terms of noise margin and power consumption, the integration of p-channel and n-channel TFTs into complementary circuits is expected to provide significant advantages over unipolar circuits.[18, 19] But since the performance of even the best organic n-channel TFTs is still notably inferior to that of organic p-channel TFTs, the choice of the semiconductor for the n-channel TFTs in complementary circuits is even more crucial than that for the p-channel TFTs. Among the very few organic semiconductors that have shown carrier mobilities greater than 1 cm 2/Vs in n-channel TFTs operated in ambient air [20] is the small-molecule material Polyera ActivInk N1100 (PTCDI-(CN) 2-(CH 2C 3F 7) 2).[21–23] In addition to an exceptionally large electron mobility, N1100 also provides very good long-term stability in ambient air.[24] The N1100 molecule consists of a perylene tetracarboxylic diimide (PTCDI) core equipped with cyano substituents at the bay positions and fluoroalkyl substituents at the imide positions. These strongly electronegative substituents have beneficial effects on the material’s packing density, electron mobility and air stability. Interestingly, the largest mobilities reported for thin films of ActivInk N1100 were obtained in TFTs in which the gate-dielectric surface had been modified with a self-assembled monolayer (SAM) based on a fluoroalkyl silane [23] or a fluoroalkyl phosphonic acid [24] prior to the semiconductor deposition. This is unusual, as most organic semiconductors show better performance when deposited onto alkyl …