View article

The static and dynamic electrical characteristics of thin-film transistors (TFTs) are often limited by the parasitic contact resistances, especially for TFTs with a small channel length. For the smallest possible contact resistance, the staggered device architecture has a general advantage over the coplanar architecture of a larger injection area. Since the charge transport occurs over an extended area, it is inherently more difficult to develop an accurate analytical device model for staggered TFTs. Most analytical models for staggered TFTs, therefore, assume that the contact resistance is linear, even though this is commonly accepted not to be the case. Here, we introduce a semiphenomenological approach to accurately fit experimental data based on a highly discretized equivalent network circuit explicitly taking into account the inherent nonlinearity of the contact resistance. The model allows us to investigate the influence …