View article

Stretchable form factors enable electronic devices to conform to irregular 3D structures, including soft and moving entities. Intrinsically stretchable devices have potential advantages of high surface coverage of active devices, improved durability, and reduced processing costs. This work describes intrinsically stretchable transistors composed of single-walled carbon nanotube (SWNT) electrodes and semiconductors and a dielectric that consists of a nonpolar elastomer. The use of a nonpolar elastomer dielectric enabled hysteresis-free device characteristics. Compared to devices on SiO₂ dielectrics, stretchable devices with nonpolar dielectrics showed lower mobility in ambient conditions because of the absence of doping from water. The effect of a SWNT band gap on device characteristics was investigated by using different SWNT sources as the semiconductor. Large-band-gap SWNTs exhibited trap-limited …