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We have performed thermally-stimulated-current (TSC) and capacitance-voltage measurements on 370-1080 nm thermal, SIMOX, and bipolar-base oxides as functions of bias, dose rate, and temperature during irradiation. Base oxides built in a development version of Analog Devices' RF25 process show much more interface-trap buildup than XFCB oxides. Both net-oxide-trap and interface-trap charge densities for RF25 capacitors are enhanced significantly during low-dose-rate or high-temperature irradiation at 0 V over high-rate, 25/spl deg/C exposures. TSC measurements show the increase in net-oxide-trap charge density is due to a decrease in trapped electron density with decreasing dose rate or increasing irradiation temperature (at least to 125/spl deg/C), and not by increased trapped hole density. Similar enhancement of net-oxide-trap and interface-trap charge density with decreasing dose rate is found …